Ferroelectric Memory Characterization

At UC Berkeley's AIK Lab, I developed an automated test platform to characterize ferroelectric capacitors for next-generation non-volatile memory devices.

The system interfaces with precision instruments (SMUs, LCR meters, oscilloscopes) via GPIB/VISA to perform standardized PUND measurements, fatigue cycling, and retention tests. Data pipelines process raw waveforms into hysteresis loops and extract figures of merit like remnant polarization and coercive field.

The goal is to accelerate materials screening for HfO2-based ferroelectric films, which are promising for embedded non-volatile memory in advanced CMOS nodes.